The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 1982
Filed:
May. 19, 1980
Applicant:
Inventors:
John T Davies, El Sobrante, CA (US);
Richard F Reichelderfer, Castro Valley, CA (US);
Assignee:
Branson International Plasma Corporation, Hayward, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
C23C / ; H01L / ;
U.S. Cl.
CPC ...
156643 ; 118731 ; 156345 ; 156646 ; 198776 ; 2041 / ; 204298 ;
Abstract
Automated reactor system and process for etching or otherwise processing semiconductor wafers in a plasma environment. The wafers are carried into and out of a reaction chamber by a conveyor and processed on an individual basis. Within the chamber, an electrode mounted on a swinging arm carries each wafer from the conveyor to a processing position adjacent to a stationary electrode. Gas is admitted to the chamber, and the electrodes are energized to ionize the gas and form a plasma for processing the wafer between the electrodes.