The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 1981
Filed:
Nov. 11, 1977
Applicant:
Inventors:
Frank Scornavacca, Emerson, NJ (US);
Richard L Bersin, Castro Valley, CA (US);
Assignee:
Branson International Plasma Corporation, Hayward, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
C23F / ; H01L / ; C03C / ; C03C / ;
U.S. Cl.
CPC ...
156643 ; 156345 ; 156646 ; 156656 ; 156657 ; 2041 / ; 252 791 ;
Abstract
Gas plasma process and gas mixture useful for the removal of materials in the manufacture of semiconductor devices. Substrate wafers or other semiconductor devices are exposed to a gaseous plasma containing SiF.sub.4 or SiF.sub.4 and oxygen for a time sufficient to effect a desired removal of material from the wafer or device. The process and gas are particularly suitable for selective etching of Si.sub.3 N.sub.4 and the stripping of photoresist, as well as the etching of materials such as silicon and compounds containing silicon.