The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 1981
Filed:
Jun. 08, 1976
Applicant:
Inventors:
Jun-Ichi Nishizawa, Sendai, JP;
Takashi Kitsuregawa, Itami, JP;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 22 ; 357 20 ; 357 36 ; 357 51 ;
Abstract
Vertical type field effect transistors are disclosed including one of the highly doped source, gate and drain regions disposed on one of the main opposite faces of one of the semiconductor substrate and the remaining region or regions disposed on the other mainface of the substrate. At least one of the regions is divided into a plurality of elongated slender portions and metallic electrodes are disposed in ohmic contact with the respective regions so as to be identical in configuration to the latter. The highly doped regions themselves may form electrodes.