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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 4297718 B1

PDFFull Text
Date of Patent:
Oct. 27, 1981

Filed:

Jun. 08, 1976

Vertical type field effect transistor

Applicant:
Inventors:

Jun-Ichi Nishizawa, Sendai, JP;

Takashi Kitsuregawa, Itami, JP;

Assignee:

Semiconductor Research Foundation Mitsubishi Denki K.K., , JP;

Attorneys:

Burns; Robert E.

Lobato; Emmanuel J.

Adams; Bruce L.

Primary Examiner:

William D Larkins

Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 22 ; 357 20 ; 357 36 ; 357 51 ;
Abstract

Vertical type field effect transistors are disclosed including one of the highly doped source, gate and drain regions disposed on one of the main opposite faces of one of the semiconductor substrate and the remaining region or regions disposed on the other mainface of the substrate. At least one of the regions is divided into a plurality of elongated slender portions and metallic electrodes are disposed in ohmic contact with the respective regions so as to be identical in configuration to the latter. The highly doped regions themselves may form electrodes.

Find Patent Forward Citations

Nishizawa, Jun-Ichi. (1981). Vertical type field effect transistor (U.S. Patent No. 4297718). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4297718

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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