The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 1981
Filed:
Apr. 04, 1979
Minoru Takahashi, Katsuta, JP;
Takahiko Tanigami, Mito, JP;
Kaoru Uchiyama, Katsuta, JP;
Hitoshi Minorikawa, Mito, JP;
Motohisa Nishihara, Katsuta, JP;
Kanji Kawakami, Katsuta, JP;
Seiko Suzuki, Hitachiota, JP;
Hiroaki Hachino, Hitachi, JP;
Yutaka Misawa, Katsuta, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A semiconductor absolute pressure transducer assembly has a silicon diaphragm assembly and a covering member. The silicon diaphragm assembly has a circular pressure sensitive diaphragm, on the surface of which are diffused piezoresistors and conducting paths. The covering member composed of borosilicate glass has a circular well formed therein. On the surface of the silicon diaphragm assembly on which the piezoresistors and the conducting paths are diffused, a passivating layer of silicon dioxide is deposited. Further on the passivating layer, a conductive layer is formed by, for example, evaporating silicon. And the glass covering member is bonded on the silicon diaphragm assembly by anodic bonding. Namely, the silicon diaphragm assembly and the glass covering member are heated up to a certain high temperature and a relative high voltage applied across the conductive layer of the silicon diaphragm assembly and the glass covering members.