The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 1981
Filed:
Mar. 10, 1980
Applicant:
Inventors:
Praveen Chaudhari, Briarcliff Manor, NY (US);
Ned J Chou, Yorktown Heights, NY (US);
Ralph Feder, Hyde Park, NY (US);
Alan B Fowler, Yorktown Heights, NY (US);
James A VanVechten, Ossining, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C / ; C03C / ; C03C / ; H01L / ;
U.S. Cl.
CPC ...
156628 ; 156630 ; 156633 ; 156643 ; 156644 ; 156657 ; 1566591 ; 156667 ; 156606 ; 430296 ; 430323 ; 427 85 ;
Abstract
A high aspect ratio collimating mask for use in ion beam epitaxy or ion implantation doping is formed through the use of damage-trail-forming materials which are irradiated through a mask and then etched. The high aspect ratio is obtained in part by the sequential formation of a plurality of spaced mask plates. The mask is useful in producing large scale integrated circuits by ion implantation during epitaxial growth of a crystal wafer.