The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 1981
Filed:
Jun. 15, 1979
Toshikazu Shimada, Hinodemachi, JP;
Yoshifumi Katayama, Tokorozawa, JP;
Kiichi F Komatsubara, Tokorozawa, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A photoconductive material comprising an amorphous substance whose indispensable constituent elements are silicon, carbon and hydrogen is disclosed. The photoconductive material preferably has a structure expressed by [Si.sub.1-x C.sub.x ].sub.1-y [H].sub.y where 0.02.ltoreq.x.ltoreq.0.3 and 0.02.ltoreq.y.ltoreq.0.3. Up to 40% of the carbon can be substituted by germanium. The peak of response can be established for light of any desired wavelength between approximately 5,600 A-4,500 A. This photoconductive material is particularly useful when applied to a light-sensitive film which is operated in the storage mode. The light-sensitive film includes the photoconductive material in a region in which pairs of free electrons and positive holes are created upon incidence of light.