The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 1981
Filed:
Oct. 11, 1979
Aline Akselrad, Princeton, NJ (US);
Western Electric Co., Incorporated, New York, NY (US);
Abstract
A method of depositing a uniform dielectric film on a silicon substrate comprising flowing a plasma comprising an RF-excited mixture of an inert gas such as argon and silane over the substrate to form a film of porous a-Si.sub.x H.sub.y over the surface of the substrate. The flow of plasma is then discontinued and a flow of a nitrogen or oxygen plasma is substituted therefor. The temperature of the substrate is increased to at least 360.degree. C. to diffuse-out hydrogen from the Si.sub.x H.sub.y film on the substrate, each departing hydrogen atom leaving a dangling Si bond behind which combines with the activated oxygen or nitrogen thereby to form the desired dielectric film of formula Si.sub.x N.sub.y or Si.sub.x O.sub.y.