The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 1981
Filed:
Jun. 09, 1980
Applicant:
Inventors:
Steven J Radigan, San Jose, CA (US);
Robert L Berry, San Jose, CA (US);
Assignee:
Fairchild Camera & Instrument Corp., Mountain View, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; C23F / ;
U.S. Cl.
CPC ...
156643 ; 148-63 ; 156650 ; 156665 ; 156667 ; 427 88 ; 427 90 ; 4271264 ; 430318 ;
Abstract
A process for patterning plasma etchable regions on a semiconductor structure includes the steps of forming a layer of an oxide of aluminum over the surface of the semiconductor structure, forming an overlying layer of plasma etchable material on the layer of oxide, and removing undesired portions of the overlying layer by plasma etching to thereby expose portions of the layer of oxide. In some embodiments of the invention the thereby exposed portions of the layer of oxide are then removed, together with any underlying portions of the first layer, by isotropic etching.