The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 1981
Filed:
Nov. 15, 1979
Applicant:
Inventors:
Hiromu Enomoto, Kawasaki, JP;
Yasushi Yasuda, Inagi, JP;
Hitoshi Ohmichi, Kawasaki, JP;
Yoshiharu Mitono, Tokyo, JP;
Assignee:
Fujitsu Limited, , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 52 ; 357 15 ; 357 46 ; 357 48 ; 357 86 ;
Abstract
A semiconductor device including a diode and a bipolar transistor which are connected to each other and formed in an isolated area of a semiconductor layer has a diffused region formed between a base region of the bipolar transistor and a formation region of the diode across the isolated area. The diffused region has the same conductivity type as that of the base region, so that a PNPN diode effect does not occur.