The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 1981
Filed:
Jan. 30, 1979
Applicant:
Inventors:
Assignee:
Hitachi, Ltd., , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 13 ; 357 20 ; 357 46 ; 357 57 ;
Abstract
A semiconductor device for use as a surge arrester of NPN (or PNP) construction, in which two NPN (or PNP) elements having different avalanche breakdown voltages are so formed that at least the intermediate layers among three layers constituting such sections are continuously connected within the same semiconductive substrate. Carriers generated in the NPN (or PNP) element, which triggers avalanche at a low voltage, cause the NPN (or PNP) element having a higher avalanche breakdown voltage to be switched to a highly conductive state. The semiconductor device of the invention provides great surge capacity, and can be used as a surge arrester of increased reliability.