The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 1981
Filed:
Dec. 20, 1978
Applicant:
Inventor:
William H Herndon, Sunnyvale, CA (US);
Assignee:
Fairchild Camera and Instrument Corp., Mountain View, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H03K / ;
U.S. Cl.
CPC ...
357 46 ; 307291 ; 307303 ; 3072386 ; 357 35 ; 357 40 ; 357 43 ;
Abstract
A semiconductor memory cell comprising first and second bipolar cell transistors cross-coupled by the inverse transistor action of third and fourth bipolar transistors. Each cross-coupling transistor is formed by a single emitter diffusion in an existing common base region of one cell transistor, above a common buried collector region of the same cell transistor. The use of cross-coupling transistors eliminates the need for a direct ohmic connection to the buried layer collector, thereby simplifying layout and reducing memory cell size.