The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 1981
Filed:
Sep. 29, 1978
Applicant:
Inventors:
Clarence W Padgett, Westminster, CA (US);
Melvin L Marmet, Corona, CA (US);
Assignee:
Rockwell International Corporation, El Segundo, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H03K / ; H03K / ;
U.S. Cl.
CPC ...
307475 ; 307270 ;
Abstract
An improved static metal oxide semiconductor (MOS) input circuit having particular utility as a TTL input receiver, is fabricated from enhancement and depletion-type field effect transistors (FETs). The input circuit is adapted to produce positive feedback to adjust the on-resistance ratios of some of the circuit transistor devices, whereby hysteresis is developed. By virtue of the hysteresis, an extended noise margin is provided at the circuit input terminal so that MOS logic level output signals are clearly distinguishable from one another at the circuit output terminal.