The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 1981
Filed:
Aug. 20, 1979
Marian Briska, Boeblingen, DE;
Klaus P Thiel, Boeblingen, DE;
International Business Machines Corporation, Armonk, NY (US);
Abstract
An open diffusion method of doping a silicon body with boron. In a first open diffusion heating step, a boron glass is deposited upon the silicon body with a silicon-rich boron phase (SiB.sub.6) formed beneath the glass where deposition is directly on silicon. The boron glass and SiB.sub.6 layer are formed by exposing the silicon body to a gas mixture containing a predetermined boron quantity and boron and oxygen in a predetermined quantitative ratio. Etching steps then permit the removal of the boron glass without deleteriously affecting the SiB.sub.6 layer or underlying silicon, or uncontrollably affecting any SiO.sub.2 masking layers. In a second heating step, at least a part of the boron from the SiB.sub.6 layer is driven into the silicon in an inert or oxidizing atmosphere.