The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 1981
Filed:
Aug. 27, 1979
Intel Corporation, Santa Clara, CA (US);
Abstract
An MOS dynamic random-access memory (RAM) realizable as a 64K RAM is disclosed. Single transistor cells employing capacitive storage are coupled to folded bit-line halves. These bit-line halves are connected to sense amplifiers employing cross-coupled transistors. Boosting means employing a variable capacitance are coupled to the bit-line halves to boost the potential on a line during reading. The capacitor associated with each of the memory cells is coupled to a potential which is greater than the power supply potential. This plate potential is substantially constant and independent of power supply variations and is internally generated. The dummy cells employed within the RAM are charged in a unique manner to a substantially constant potential which does not vary with power supply variations.