The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 1980
Filed:
Oct. 11, 1977
Applicant:
Inventor:
Gregorio Spadea, Saratoga, CA (US);
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01J / ;
U.S. Cl.
CPC ...
29571 ; 29578 ; 29584 ; 148-15 ; 358 59 ; 357 91 ; 2957 / ;
Abstract
Ions are implanted into a body, such as semiconductor substrate material, through one or more covering layers formed over the body. A thin conductive film is in contact with the covering layer prior to the ion implantation. The ions are implanted into the material through the thin conductive film. The conductive film functions to conduct away any charge which tends to accumulate in the covering layer. The conductive film thereby prevents a charge accumulation which would tend to discharge through and cause damage to the covering layer. The method is particularly useful for fabricating MOS and CMOS semiconductor devices.