The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 1980
Filed:
May. 18, 1979
Georges J Gorin, Emeryville, CA (US);
Josef T Hoog, Novato, CA (US);
Tegal Corporation, Novato, CA (US);
Abstract
A plasma reactor apparatus providing improved uniformity of etching and having a totally active reaction volume. The reactor apparatus is comprised of two electrically separated electrodes which bound a reaction volume. The topmost electrode functions as both a gas distribution manifold for uniformly injecting reactant gases into the reaction volume and as an exhaust manifold for uniformly withdrawing reaction products from the reaction volume. The two electrodes are so configured that the plasma reaction takes place only between the electrodes; there is no inactive space surrounding the electrodes to fill with plasma. The configuration is thus conservative of both reactants and energy. The bottommost plate which serves as a workpiece holder is movable with respect to the upper plate to permit loading and unloading of workpieces. The uppermost plate is the active RF electrode while the workpiece holder is maintained at a RF ground potential. The uppermost plate has a larger electrode area which effectively imposes a dc offset to the RF field which enhances the uniformity of the etching and decreases the undesirable spread of undercut etching.