The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 1980
Filed:
Aug. 23, 1978
Applicant:
Inventors:
Takeshi Matsushita, Sagamihara, JP;
Takayoshi Mamine, Tokyo, JP;
Hisao Hayashi, Atsugi, JP;
Kazuo Nishiyama, Yamato, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148-15 ; 357 64 ; 357 91 ;
Abstract
A method of an iron Fe ion implantation into a semiconductor substrate of an N-type conductivity is disclosed. The method comprises the steps of implanting Fe ions into an N-type semiconductor substrate from its one surface with the dose amount of 10.sup.10 to 10.sup.15 cm.sup.-2 and heat-treating the semiconductor substrate with Fe ions at 850.degree. to 1250.degree. C. to control the lifetime of the minority carrier in the substrate and hence to reduce the temperature dependency of the lifetime.