The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 1980
Filed:
Nov. 01, 1977
Kenji Natori, Kamakura, JP;
Fujio Masuoka, Yokohama, JP;
Abstract
A semiconductor memory device in which a plurality of unit memory cells are formed on a semiconductor substrate; each memory cell comprises a main electrode region provided with either of the source and drain sections of an MOS transistor, a gate region and an MOS capacitor region, the main electrode region, gate region and capacitor region being arranged in the order mentioned; a recess is formed in a semiconductor region including the gate region and part of the MOS capacitor region; the gate region is formed in one selected portion of the recess-defining wall body; and part of the capacitor electrode of the capacitor region extends over another selected portion of the recess-defining wall body.