The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 1980
Filed:
Sep. 18, 1978
Applicant:
Inventors:
Mike F Chang, Liverpool, NY (US);
Alfred Roesch, Auburn, NY (US);
Richard W Kennedy, Skaneateles, NY (US);
Assignee:
General Electric Company, Auburn, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148188 ; 148189 ;
Abstract
A method for selectively diffusing a semiconductor body with p-conductivity type impurities utilizing aluminum as a diffusion source and able to be performed in a reuseable open diffusion tube is described. A gas flow is established in the diffusion tube which is essentially an inert gas and includes from one to ten percent oxygen. Simultaneous blanket and selective diffusions may be formed in accordance with this invention by modifying the amount of oxygen in the flow.