The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 1980
Filed:
Jun. 16, 1978
Takashi Hirao, Neyagawa, JP;
Shigetoshi Takayanagi, Kyoto, JP;
Takeshi Onuma, Katano, JP;
Toshio Sugawa, Kadoma, JP;
Kaoru Inoue, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Kadoma, JP;
Abstract
A junction-type FET comprising a semiconductor substrate 21 of a first conductivity type, and island region 22 of a second conductivity type which comprises a channel region and is selectively formed in the semiconductor substrate 21, and a buried isolating region 27 which is selected from the group consisting of an intrinsic layer, a low impurity concentration layer of the second conductivity type and a layer of first conductivity type, the buried isolating layer being formed by ion implantation of impurities of the first conductivity type in the island region 22 while keeping the impurity concentration at the surface thereof relatively high, and the buried isolating layer substantially isolating the channel region from the surface.