The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 1979
Filed:
Jan. 18, 1977
Semiconductor Research Foundation, BOTH OF, JP;
Mitsubishi Denki Kabushiki Kaisha, BOTH OF, JP;
Abstract
A process of manufacturing a static induction thyristor comprising providing a semiconductor substrate of the first conductivity type which defines a first semiconductor layer and forming a second semiconductor layer thereon of a second conductivity type. The first and second semiconductor layers have relative impurity concentrations effective for forming therebetween charge depletion regions when no electrical signal is applied to the second semiconductor layer and which prevent injection of charge carriers through the second semiconductor layer when the thyristor is in a blocking state, and such that electrically forward biasing the second semiconductor layer effectuates a sufficient reduction of the depletion regions that a sufficient quantity of charge carriers may be injected through the second semiconductor layer that the thryistor switches to a conductive state. The second semiconductor layer defines the gate region of the thyristor.