The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 1979
Filed:
Jun. 06, 1978
Applicant:
Inventors:
Tak Hung Ning, Yorktown Heights, NY (US);
Hwa Nien Yu, Yorktown Heights, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148-15 ; 2957 / ; 29579 ; 29591 ; 148174 ; 148175 ; 148187 ; 148188 ; 156643 ; 156644 ; 156653 ; 156657 ; 156659 ; 357 20 ; 357 34 ; 357 54 ; 357 59 ; 357 91 ; 427 85 ; 427 86 ; 427 88 ;
Abstract
A method consisting of a sequence of process steps for fabricating a bipolar transistor having base contacts formed of polysilicon material and an emitter contact formed of polysilicon material or metal. The emitter contact is self-aligned to the base contacts by the use of process steps wherein a single mask aperture is used for defining the base contacts and the emitter.