The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 1979
Filed:
Jun. 12, 1978
Applicant:
Inventor:
William L Morgan, Sunnyvale, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148187 ; 29571 ; 29578 ; 29580 ; 156628 ; 156653 ; 156657 ; 156661 ; 156662 ; 357 23 ; 357 59 ;
Abstract
A process for fabricating a double layer polycrystalline silicon structure for a metal-oxide-semiconductor (MOS) integrated circuit. The upper polycrystalline silicon layer after being etched to form a predetermined pattern is used as a masking member for etching the lower polycrystalline silicon layer, thereby assuring alignment between the layers. A selective etchant which discriminates between the silicon layers is employed.