The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 1979
Filed:
Jun. 10, 1977
Louis R Thibault, Piscataway, NJ (US);
Leopoldo D Yau, New Providence, NJ (US);
Bell Telephone Laboratories, Incorporated, Murray Hill, NJ (US);
Abstract
In one embodiment, a relatively thin layer of polysilicon is deposited on an underlying region to which spaced-apart electrical contacts are to be made through a subsequently formed relatively thick insulating layer. The polysilicon is selectively masked by a patterned silicon nitride layer in the regions where contact windows are to be formed. The unmasked polysilicon is then converted to a relatively thick insulating layer in an oxidizing step. Thereafter the silicon nitride portions are removed and the remaining polysilicon is utilized to provide conductive regions in the defined windows. In another embodiment, a relatively thick layer of polysilicon is selectively masked and partially converted to silicon dioxide to define both the insulating layer and the conductive regions. In still another embodiment, a relatively thin layer of polysilicon is patterned and then entirely converted to silicon dioxide to form an insulating layer having windows defined therein.