The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 1978
Filed:
Nov. 19, 1976
Bernhard Authier, Burghausen, DE;
Rudolf Griesshammer, Burghausen, DE;
Franz Koppl, Altotting, DE;
Winfried Lang, Burghausen, DE;
Erhard Sirtl, Marktl, Inn, DE;
Heinz-Jorg Rath, Burghausen, DE;
Wacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe mbH, Burghausen, DE;
Abstract
Process for producing large-size, self-supporting plates of silicon deposd from the gaseous phase on a substrate body, which comprises heating a graphite substrate to deposition temperature of silicon, which is deposited on the substrate from a gaseous compound to which a dopant has been added until a layer of about 200 to 650 .mu.m has formed, subsequently melting 40-100% of this layer from the free surface downward, resolidifying the molten silicon by adjustment of a temperature gradient from the substrate body upward, and finally separating the silicon therefrom. The plates so formed are used primarily for making solar cells.