The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 1978
Filed:
Aug. 27, 1976
Robert Charles Frye, Brighton, MA (US);
Alan Harry Katz, New Orleans, LA (US);
Charles Robert Hewes, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
Insulated gate field effect transistor charge regenerator amplifiers respectively cross-couple the output regions of a pair of two-phase CCD structures with the input regions of those structures. Each amplifier senses the level of binary data charge packets from the output region of one of the shift register structures and in response thereto applies a regenerated and inverted binary data charge packet to the input region of the other shift register structure. One of the amplifiers includes logic gating for inputting and outputting data into and from the shift register structure. A charge regenerator for a two-phase CCD structure comprising first and second shift registers. The charge regenerator comprises a source follower amplifier including a driver transistor, a load transistor and a positive feedback transistor connected between the gate and source of the driver transistor. The gate of the driver transistor is precharged to a predetermined level prior to sensing of the output region charge level and the regenerator inserts into the input region a charge packet corresponding to the data level sensed at the output region, without inversion.