The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 1978
Filed:
Nov. 25, 1977
Applicant:
Inventors:
Tak Hung Ning, Yorktown Heights, NY (US);
Carlton Morris Osburn, Croton-on-Hudson, NY (US);
Hwa Nien Yu, Yorktown Heights, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148-15 ; 148187 ; 357 23 ; 357 91 ;
Abstract
Positive charges that appear in the gate silicon oxide insulation of a silicon insulated gate field-effect transistor device may be controlled through neutralization by injecting electrons in to the gate oxide from the substrate after the device is complete and metallized by irradiating the back of the substrate with light in the presence of a voltage bias.
Ning, Tak. (1978). Gate charge neutralization for insulated gate field-effect transistors (U.S. Patent No. 4116721). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4116721
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile