The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 1978
Filed:
Jun. 29, 1977
Applicant:
Inventor:
Richard T Simko, Los Altos, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 23 ; 357 41 ; 357 59 ; 307304 ; 307238 ; 365185 ;
Abstract
A triple layer polysilicon cell for use in an electrically erasable PROM or for a discretionary circuit connector is described. Tunneling is employed to transfer charge to a floating gate from a programming gate and also to transfer charge from the floating gate to an erasing gate. Through light doping steps, the first layer of polysilicon (programming gate) and a second layer of polysilicon (floating gate) include rough surfaces. These rough surfaces provide enhanced electric fields which allow tunneling through relatively thick oxides.