The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 1978
Filed:
Oct. 19, 1976
Applicant:
Inventors:
Assignees:
Semiconductor Research Foundation, BOTH OF, JA;
Mitsubishi Denki Kabushiki Kaisha, BOTH OF, JA;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 38 ; 359 20 ; 359 21 ; 359 22 ; 359 56 ; 359 58 ;
Abstract
The disclosed thyristor comprises an n.sup.- semi-conductor layer, a p.sup.- semiconductor layer disposed on one surface of the n.sup.- layer to form a pn junction between them, an n.sup.+ and a p.sup.+ semiconductor layer disposed on the other surfaces of the n.sup.- and p.sup.- layers respectively to serve as main electrodes and a p.sup.+ and a n.sup.+ apertured gate layers disposed within the n.sup.- and p.sup.- layers respectively and provided with a gate electrode. An intrinsic semiconductor layer may be substituted for the n.sup.- and p.sup.- layers. A process of producing such a thyristor is also disclosed.