The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 1978
Filed:
Apr. 19, 1976
Applicant:
Inventors:
Teruaki Aoki, Tokyo, JA;
Takeshi Matsushita, Sagamihara, JA;
Tadayoshi Mifune, Yokohama, JA;
Hisao Hayashi, Atsugi, JA;
Assignee:
Sony Corporation, Tokyo, JA;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148-15 ; 148187 ; 357 52 ; 357 59 ; 357 91 ; 427 93 ; 427 94 ;
Abstract
An oxygen or nitrogen ion beam is implanted into a polycrystalline silicon or in an amorphous silicon layer, or a single crystal device body or layer, on a semiconductor substrate to an extent sufficient to convert the polycrystalline silicon layer, the amorphous layer or the single crystal device body or layer into a semi-insulating layer having a resistivity of 10.sup.7 to 10.sup.11 ohm-cm, which has improved passivation property.