The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 1978
Filed:
Feb. 12, 1976
Richard E Crippen, Mountain View, CA (US);
Hemraj K Hingarh, Santa Clara, CA (US);
Peter W Verhofstadt, Saratoga, CA (US);
Fairchild Camera and Instrument Corporation, Mountain View, CA (US);
Abstract
A graduated multiple collector structure for inverted vertical bipolar transistors, integrated injection logic devices and the like. The invention increases the gain of more distant collectors toward which current flows laterally past intervening collectors from a base contact, and injector or the like. The series resistance drop and the current loss in the base-emitter junction are compensated for by progressively increasing the effective area of collectors further distant from the source of the base current. Although the graduated collector structure is applicable to a wide variety of semiconductor devices, it is particularly well suited for use in oxide-isolated integrated injection logic gates. A mathematical model is provided which can help to optimize designs incorporating the graduated collector structure.