The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 1978
Filed:
May. 11, 1976
Yasunobu Kosa, Kodaira, JA;
Hitachi, Ltd., , JA;
Abstract
A method for fabrication of an n-channel MIS device is composed of forming a source region and a drain region in the surface of a p-type semiconductor substrate by the diffusion of a first n-type impurity through a mask pattern including an insulator gate film, forming a first silicate glass film on the surface of the resultant substrate, providing windows for source, drain and gate contacts in the first silicate glass film, diffusing a second n-type impurity through the windows for source and drain contacts to form n-type high impurity concentration regions, selectively removing a second silicate glass film formed simultaneously with the diffusion of the second n-type impurity while leaving the portions of the second silicate glass film except at least the windows for source, drain and gate contacts, and providing metal contacts in the windows.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile