The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 1977
Filed:
Feb. 02, 1976
Hidenobu Mochizuki, Atsugi, JA;
Teruaki Aoki, Tokyo, JA;
Takeshi Matsushita, Sagamihara, JA;
Hisao Hayashi, Atsugi, JA;
Masanori Okayama, Atsugi, JA;
Sony Corporation, Tokyo, JA;
Abstract
A method for fabricating a semiconductor device includes the steps of forming a first polycrystalline silicon layer containing oxygen atoms on a semiconductor layer, of forming a second polycrystalline silicon layer containing nitrogen atoms on the first polycrystalline silicon layer, of removing a predetermined part of the first and second polycrystalline silicon layers to form an opening therein, and of diffusing impurity material into the semiconductor layer through the opening in order to form a diffused region. The fabricating process can be remarkably simplified.