The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 1977
Filed:
Feb. 02, 1976
Applicant:
Inventor:
Richard T Simko, Mountain View, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
156628 ; 29580 ; 148187 ; 156643 ; 156653 ; 156657 ; 156661 ; 156662 ; 427 85 ; 427 93 ;
Abstract
A method for forming a narrow gap in a material in which a first masking layer and a second masking layer are disposed on a layer of material and are selectively removed to expose a portion of the surface of the material. A third masking layer is then disposed on the material. The first and third layers and the material are then selectively etched to form such narrow gap. The portions of the material separated by the gap may be used as MOS integrated circuit gates and a gate may also be formed in the gap by first depositing an insulating layer in the gap and then filling the gap with a conductive material.