The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 1977
Filed:
Jun. 25, 1976
Applicant:
Inventor:
Richard D Pashley, Mountain View, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148-15 ; 29571 ; 148187 ; 357 23 ; 357 41 ; 357 42 ; 357 91 ;
Abstract
In a substrate, a process for forming a plurality of host regions of different conductivity types and dopant concentration levels. These various host regions include the channels of MOS field-effect devices, thereby providing devices of different voltage thresholds. Overlapping masking and doping provides numerous host regions with a minimum of masking.