The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 1977
Filed:
Nov. 26, 1975
Applicant:
Inventors:
Shakir Ahmed Abbas, Wappingers Falls, NY (US);
Robert Charles Dockerty, Highland, NY (US);
Assignee:
IBM Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D / ;
U.S. Cl.
CPC ...
427 86 ; 427 85 ; 427 88 ; 427 93 ; 427 94 ; 427 95 ; 427261 ; 427264 ; 427265 ; 4272 / ; 4272 / ; 2041 / ; 4272 / ;
Abstract
An improved field effect transistor structure which reduces a leakage phenomenon, termed the 'sidewalk' effect, between the semiconductor substrate and a conductive silicon dioxide layer disposed over the substrate. The improvement comprises forming a layer of highly resistive silicon dioxide or silicon oxynitride, which is between the conductive oxide and the silicon nitride layer which forms a portion of the gate insulator for the field effect transistor.