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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 4049478 B1

PDFFull Text
Date of Patent:
Sep. 20, 1977

Filed:

Dec. 08, 1975

Utilization of an arsenic diffused emitter in the fabrication of a high

Applicant:
Inventors:

Hitendra N Ghosh, Poughkeepsie, NY (US);

Madhukar L Joshi, Essex Junction, VT (US);

Tsu-Hsing Yeh, Poughkeepsie, NY (US);

Assignee:

IBM Corporation, Armonk, NY (US);

Attorneys:

Galvin; Thomas F.

Saile; George O.

Primary Examiner:

L Dewayne Rutledge

Assistant Examiner:

W G Saba

Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148187 ; 2957 / ; 29578 ; 148-15 ; 148186 ; 148189 ; 357 63 ; 357 88 ; 357 89 ; 357 90 ;
Abstract

A substantially square N-type impurity distribution profile in a silicon substrate produces much superior dc and ac characteristics in PN junction devices than can be expected from the usual phosphorus distribution profile. Such a square profile is obtained by diffusion of arsenic in the silicon substrate. The sharper impurity gradient allows a relatively low surface concentration to be used for the device. This lower surface concentration relieves precipitation and dislocation problems.

Find Patent Forward Citations

Ghosh, Hitendra. (1977). Utilization of an arsenic diffused emitter in the fabrication of a high (U.S. Patent No. 4049478). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4049478

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