The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 1977
Filed:
Sep. 08, 1975
Applicant:
Inventors:
Assignee:
Hitachi, Ltd., , JA;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
427 93 ; 156648 ; 156653 ; 156656 ; 156657 ; 357 50 ;
Abstract
A method for manufacturing a semiconductor device wherein semiconductor material is selectively removed from a principal surface of a semiconductor substrate having at least one semiconductor layer formed thereon to provide a groove that extends through said layer and into the substrate and wherein the semiconductor material of the substrate is selectively oxidized to form an oxide insulator layer within the groove. The groove has a width which is smaller than the thickness of the semiconductor layer and the oxide insulator layer serves to isolate a portion of the semiconductor layer from adjacent portions of the substrate.