The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 1977
Filed:
Nov. 22, 1974
Applicant:
Inventors:
Assignee:
Hitachi, Ltd., , JA;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 54 ; 357 72 ; 427 82 ;
Abstract
Disclosed is a semiconductor device including a Si body, and SiO.sub.2 layer disposed on the surface of the body, an aluminum oxide layer having a thickness of about 50 A on the SiO.sub.2 layer, which is formed by applying a solution including an aluminum chelate compound onto the SiO.sub.2 layer and heating the solution at a temperature of 300.degree. C. for 30 minutes, and a polymer resin layer of polyimide disposed on the aluminum oxide layer. In this device, the adhesive-strength between the SiO.sub.2 layer and the polyimide layer is remarkably increased when compared with a semiconductor device wherein the polyimide layer is directly disposed on the SiO.sub.2 layer.