The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 1977
Filed:
Dec. 16, 1975
Applicant:
Inventor:
Richard D Pashley, Mountain View, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01J / ;
U.S. Cl.
CPC ...
29571 ; 29577 ; 29578 ; 357 41 ; 357 46 ;
Abstract
A process for fabricating MOS silicon gate transistors which provide high density and high speed devices. The process includes the use of a boron ion implantation step to prevent punch-through and to adjust the thresholds of enhancement mode transistors. Both enhancement mode and depletion mode transistors are simultaneously produced with the disclosed process.