The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 1977
Filed:
Jun. 30, 1976
Applicant:
Inventors:
John L Deines, Pleasant Valley, NY (US);
San-Mei Ku, Poughkeepsie, NY (US);
Michael R Poponiak, Newburgh, NY (US);
Paul J Tsang, Poughkeepsie, NY (US);
Assignee:
IBM Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
148175 ; 29577 ; 29578 ; 29580 ; 148174 ; 156612 ; 156648 ; 156654 ; 204 15 ; 204 / ; 2041293 ; 20412965 ; 357 40 ; 357 49 ; 357 50 ; 357 55 ; 357 58 ; 357 59 ; 357 61 ; 423345 ; 427 87 ; 427 93 ; 427249 ;
Abstract
A method for forming monocrystalline silicon carbide on a silicon substrate by converting a portion of the monocrystalline silicon substrate into a porous silicon substance by anodic treatment carried out in an aqueous solution of hydrofluoric acid, heating the resultant substrate to a temperature in the range of 1050.degree. C to 1250.degree. C in an atmosphere that includes a hydrocarbon gas for a time sufficient to react the porous silicon and the gas, thereby forming a layer of monocrystalline silicon carbide on the silicon substrate.