The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 1977
Filed:
Oct. 29, 1975
Applicant:
Inventor:
William H Owen, III, Sunnyvale, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
156628 ; 29580 ; 148187 ; 156657 ; 156662 ;
Abstract
A process for fabricating narrow silicon members from a polycrystalline silicon layer, such as gates for MOS field-effect transistors. The edge of a mask is used to define a gap which exposes a narrow line on the underlying silicon layer. A doped region is formed in the silicon layer through the gap and then the layer is selectively etched. The critical dimensions of the fabricated silicon members are determined by the extent of diffusion of the dopant and are substantially independent of masking tolerances.