The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 1977
Filed:
Feb. 13, 1976
Applicant:
Inventors:
Yasuo Wada, Tokyo, JA;
Hiroo Usui, Machida, JA;
Mitsumasa Koyanagi, Kokubunji, JA;
Mikio Ashikawa, Koganei, JA;
Assignee:
Hitachi, Ltd., , JA;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148-15 ; 29578 ; 148174 ; 148175 ; 357 49 ; 357 50 ; 357 54 ; 357 59 ; 357 91 ; 427 93 ; 427 94 ;
Abstract
A polycrystalline silicon layer is deposited by chemical vapor deposition method at a predetermined location on an oxide film grown by thermal oxidation on a surface of a monocrystal silicon substrate. Nitrogen ions are implanted in the outer surface of the polycrystalline silicon layer and the exposed surface of the oxide film. The whole surfaces are oxidized by wet oxidation so as to form a thick oxide layer at the surface of the oxide film which is not covered by the polycrystalline silicon layer.