The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 1977
Filed:
Jun. 25, 1973
Applicant:
Inventors:
Assignee:
Hitachi, Ltd., , JA;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 54 ; 357 34 ; 357 52 ;
Abstract
An improved transistor structure having a substrate, base and emitter regions formed in the major surface thereof includes an insulating film having first and second portions. The first portion of the insulating film is formed on the major surface of the substrate covering the pn junctions between the emitter, base and substrate proper, while a second portion of the film is spaced apart from the pn junction. The second portion of the film has a thickness larger than that of the first portion of the film.
Yamada, Eiichi. (1977). Semiconductor device having insulator film with different prescribed (U.S. Patent No. 4012763). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4012763
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile