The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 1977
Filed:
Sep. 02, 1970
Applicant:
Inventors:
Assignee:
Hitachi, Ltd., , JA;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 52 ; 357 13 ; 357 23 ; 357 41 ; 357 42 ; 357 60 ;
Abstract
A semiconductor device which is provided, for the purpose of eliminating parasitic MOSFETs formed between at least two circuit elements (such as MOSFET, TRANSISTOR, RESISTOR, and the like) on a semiconductor substrate, with a high impurity concentration layer of the same conduction type as the substrate in a manner such that the layer is not only in the semiconductor substrate between said circuit elements but is also partially overlapped by the circuit element regions.
Kubo, Masaharu. (1977). Mosfet antiparasitic layer (U.S. Patent No. 4011581). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4011581
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile