The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 1976
Filed:
Feb. 07, 1975
Applicant:
Inventor:
Gilbert F Amelio, Saratoga, CA (US);
Assignee:
Fairchild Camera and Instrument Corporation, Mountain View, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 24 ; 3072 / ; 357 30 ; 178-71 ;
Abstract
The charge generated in semiconductor material by incident radiation is transferred to an adjacent region of the semiconductor material by lowering the potential on the adjacent region of semiconductor material relative to the potential in the region where the charge was initially generated. Charge is prevented from flowing back to the region where it was generated by means of a potential barrier formed between the generation region and the adjacent region by a region of semiconductor material highly doped relative to the substrate between said adjacent region and the region in which the charge is generated.