The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 1976
Filed:
Dec. 30, 1974
Applicant:
Inventors:
Richard T Simko, Sunnyvale, CA (US);
Phillip J Salsbury, Sunnyvale, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
3401 / ;
Abstract
A double polycrystalline silicon gate memory device having a floating gate for storing charge and a control gate. The memory device may be used as a single device cell in a memory array. A double self-aligning method is used to form the source and drain regions while doping the gates. Through a predeposition step a lightly doped secondary source and drain regions are formed in alignment with the floating gate prior to the formation of the primary source and drain regions in alignment with the control gate.