The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 05, 1976

Filed:

May. 14, 1974
Applicant:
Inventors:

Eiichi Maruyama, Kodaira, JA;

Hiroaki Hachino, Hitachi, JA;

Yasushi Saitoh, Mobara, JA;

Tadaaki Hirai, Koganei, JA;

Naohiro Goto, Machida, JA;

Yukinao Isozaki, Machida, JA;

Keiichi Shidara, Tama, JA;

Saiichi Koizumi, Tokyo, JA;

Assignees:

Hitachi, Ltd., BOTH OF, JA;

Nippon Hoso Kyokai, BOTH OF, JA;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J / ; H01J / ;
U.S. Cl.
CPC ...
313386 ; 313 94 ;
Abstract

An image pickup tube target wherein a rectifying contact which is formed at a boundary of a first layer of a material selected from the group consisting of tin oxide, indium oxide, titanium oxide, cadmium sulfide, zinc sulfide, cadmium selenide, zinc selenide, n-type germanium, n-type silicon and mixture thereof, and a second layer of a material mainly consisting of selenium and including halogen, is reversely biased and operated at a region where signal current is saturated with respect to applied voltage. The second layer of the material includes 50 atomic percent or more of selenium and 0.1 - 1000 atomic ppm of halogen. More preferably, the second layer comprises 3-20 atomic % of arsenic, 0.1-20 atomic ppm of iodine and balance mainly consisting of selenium.


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