The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 1976
Filed:
Dec. 19, 1974
Walter Steinmaier, Nijmegen, NL;
U.S. Philips Corporation, New York, NY (US);
Abstract
A method of manufacturing a semiconductor device having an insulated gate field effect transistor in which a second region of the second conductivity type is indiffused in a first region of the first conductivity type and source and drain zones of the first conductivity type are provided in said second region. According to the invention, after the indiffusion, the doping material of the second region is outdiffused in an atmosphere of reduced pressure, preferably in a vacuum, in which a zone of maximum doping concentration is formed which may advantageously be used as a channel stopper and the source and drain zones are provided in the part of the second region having a doping concentration which increases from the surface. The method is preferably used for the manufacture of structures having complementary field effect transistors.