The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 1976
Filed:
Mar. 14, 1974
Kousi Nomura, Itami, JA;
Satoru Kawazu, Itami, JA;
Yoshihiko Hirose, Itami, JA;
Isao Inoue, Itami, JA;
Yoshihiko Watari, Itami, JA;
Koichi Kijima, Itami, JA;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JA;
Abstract
A silicon substrate is selectively implanted with ions and heated in a oxidizing atmosphere. Thus an oxide film is formed on the substrate so that portions of the film formed on regions implanted with the ions is partly embedded in the substrate. Then the film is etched until the surface of the substrate is selectively exposed. An impurity is diffused into the exposed surface portions to form base regions in the substrate after which the process as above described is repeated to form windows for emitter diffusion and electrodes. Also silicon is epitaxially grown on a silicon substrate selectively provided with SiO.sub.2 films so that silicon in the form of a single crystal is grown on the exposed surface portions of the substrate while polycrystalline silicon grown on the SiO.sub.2 films. The above process is repeated to convert the polycrystalline silicon to silicon dioxide for separating the silicon regions on the exposed surface portions from one another.